IRGPS66160DPBF Insulated Gate Bipolar Transistor

IRGPS66160DPBF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.

Applications :

• Welding
• H Bridge Converters
•  part number : IRGPS66160DPbF
• Package Type : Super 247
  

Benefits : 

• High Efficiency in a Wide Range of Applications
• Optimized for Welding and H Bridge Converters
• Improved Reliability due to Rugged Hard Switching Performance and High Power Capability
• Enables Short Circuit Protection Operation
• Excellent Current Sharing in Parallel Operation
• Environmentally friendly

Features :

• Low VCE(ON) and Switching Losses
• Optimized Diode for Full Bridge Hard Switch Converters
• Square RBSOA and Maximum Temperature of 175°C
• 5µs Short Circuit
• Lead-free, RoHS compliant

Absolute Maximum Ratings :

• VCES Collector-to-Emitter Voltage 600 V
• IC @ TC = 25°C Continuous Collector Current 240A
• IC @ TC = 100°C Continuous Collector Current 160A 
• ICM Pulse Collector Current, VGE = 15V 360A
• IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 80A
• VGE Continuous Gate-to-Emitter Voltage ±20 V
• PD @ TC = 25°C Maximum Power Dissipation 750 W
• PD @ TC = 100°C Maximum Power Dissipation 375 W
•  TJ Operating Junction and -40 to +175°C

Download IRGPS66160DPBF Datasheet PDF.