IRGPS66160DPBF Insulated Gate Bipolar Transistor

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IRGPS66160DPBF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode.

Applications :

  • Welding
  • H Bridge Converters
  •  part number : IRGPS66160DPbF
  • Package Type : Super 247


  • High Efficiency in a Wide Range of Applications
  • Optimized for Welding and H Bridge Converters
  • Improved Reliability due to Rugged Hard Switching Performance and High Power Capability
  • Enables Short Circuit Protection Operation
  • Excellent Current Sharing in Parallel Operation
  • Environmentally friendly

Features :

  • Low VCE(ON) and Switching Losses
  • Optimized Diode for Full Bridge Hard Switch Converters
  • Square RBSOA and Maximum Temperature of 175°C
  • 5µs Short Circuit
  • Lead-free, RoHS compliant

Absolute Maximum Ratings :

  • VCES Collector-to-Emitter Voltage 600 V
  • IC @ TC = 25°C Continuous Collector Current 240A
  • IC @ TC = 100°C Continuous Collector Current 160A 
  • ICM Pulse Collector Current, VGE = 15V 360A
  • IFRM @ TC = 100°C Diode Repetitive Peak Forward Current 80A
  • VGE Continuous Gate-to-Emitter Voltage ±20 V
  • PD @ TC = 25°C Maximum Power Dissipation 750 W
  • PD @ TC = 100°C Maximum Power Dissipation 375 W
  •  TJ Operating Junction and -40 to +175°C

Download IRGPS66160DPBF Datasheet PDF.

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