P105N3LL 30V 150A N-channel Power MOSFET. || P105N3LL MOSFET Price.

Description :

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 

Features : 

• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
• Packages  TO-220
  

Applications :

• Switching applications
• Inverter & UPS

P105N3LL MOSFET Pinout :

Absolute maximum ratings :

• VDS Drain-source voltage: 30V 
• VGS Gate-source voltage: ± 20V 
• ID Continuous drain current at TC = 25 °C (silicon limited): 150 A
• ID Continuous drain current at TC = 100 °C (silicon limited): 105 A
• ID Continuous drain current at TC = 25 °C (package limited) 80 A
• PTOT Total dissipation at TC = 25 °C: 140 W
• Tj Max. operating junction temperature: 175 °C
  
• VGS(th) Gate threshold voltage: 2.5V

Download P105N3LL MOSFET Datasheet PDF.